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SI8487DB-T1-E1

SI8487DB-T1-E1 Vishay Siliconix

si8487db.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
auf Bestellung 2049 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.73 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 17
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Technische Details SI8487DB-T1-E1 Vishay Siliconix

Description: MOSFET P-CH 30V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 2A, 10V, Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V.

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SI8487DB-T1-E1 SI8487DB-T1-E1 Hersteller : Vishay Semiconductors si8487db.pdf MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
auf Bestellung 2037 Stücke:
Lieferzeit 14-28 Tag (e)
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Mindestbestellmenge: 33
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auf Bestellung 2885 Stücke:
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Mindestbestellmenge: 66
SI8487DB-T1-E1 SI8487DB-T1-E1 Hersteller : Vishay Siliconix si8487db.pdf Description: MOSFET P-CH 30V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
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