Produkte > VISHAY SILICONIX > SI8806DB-T2-E1
SI8806DB-T2-E1

SI8806DB-T2-E1 Vishay Siliconix


si8806db.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
auf Bestellung 1200 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
29+ 0.9 EUR
100+ 0.62 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 25
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Technische Details SI8806DB-T2-E1 Vishay Siliconix

Description: MOSFET N-CH 12V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-Microfoot, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V.

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SI8806DB-T2-E1 SI8806DB-T2-E1 Hersteller : Vishay / Siliconix si8806db.pdf MOSFET 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
auf Bestellung 12694 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
46+1.15 EUR
53+ 0.98 EUR
100+ 0.73 EUR
500+ 0.58 EUR
1000+ 0.45 EUR
3000+ 0.41 EUR
24000+ 0.35 EUR
Mindestbestellmenge: 46
SI8806DB-T2-E1 Hersteller : VISHAY si8806db.pdf SI8806DB-T2-E1 SMD N channel transistors
Produkt ist nicht verfügbar
SI8806DB-T2-E1 SI8806DB-T2-E1 Hersteller : Vishay Siliconix si8806db.pdf Description: MOSFET N-CH 12V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Produkt ist nicht verfügbar