SI8806DB-T2-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Description: MOSFET N-CH 12V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
auf Bestellung 1200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
29+ | 0.9 EUR |
100+ | 0.62 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
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Technische Details SI8806DB-T2-E1 Vishay Siliconix
Description: MOSFET N-CH 12V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-Microfoot, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V.
Weitere Produktangebote SI8806DB-T2-E1 nach Preis ab 0.35 EUR bis 1.15 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SI8806DB-T2-E1 | Hersteller : Vishay / Siliconix | MOSFET 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 |
auf Bestellung 12694 Stücke: Lieferzeit 14-28 Tag (e) |
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SI8806DB-T2-E1 | Hersteller : VISHAY | SI8806DB-T2-E1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI8806DB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 12V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-Microfoot Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V |
Produkt ist nicht verfügbar |