SI8810EDB-T2-E1 Vishay Semiconductors
auf Bestellung 15178 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.14 EUR |
| 57+ | 0.92 EUR |
| 100+ | 0.59 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
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Technische Details SI8810EDB-T2-E1 Vishay Semiconductors
Description: MOSFET N-CH 20V 2.1A MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V.
Weitere Produktangebote SI8810EDB-T2-E1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI8810EDB-T2-E1 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 20V 2.1A MICROFOOTPackaging: Cut Tape (CT) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8810EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 2.9A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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SI8810EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 2.9A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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SI8810EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 2.9A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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| SI8810EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.9A Pulsed drain current: 15A Power dissipation: 0.9W Gate-source voltage: ±8V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8810EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 2.1A MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V |
Produkt ist nicht verfügbar |
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| SI8810EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.9A Pulsed drain current: 15A Power dissipation: 0.9W Gate-source voltage: ±8V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |