SI8812DB-T2-E1 Vishay Semiconductors
auf Bestellung 25429 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
52+ | 1.02 EUR |
61+ | 0.86 EUR |
100+ | 0.6 EUR |
500+ | 0.47 EUR |
1000+ | 0.38 EUR |
9000+ | 0.37 EUR |
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Technische Details SI8812DB-T2-E1 Vishay Semiconductors
Description: MOSFET N-CH 20V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V.
Weitere Produktangebote SI8812DB-T2-E1 nach Preis ab 0.44 EUR bis 1.12 EUR
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SI8812DB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V |
auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8812DB-T2-E1 | Hersteller : Vishay | Trans MOSFET N-CH 20V 3.2A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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SI8812DB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A Kind of package: reel; tape Pulsed drain current: 20A Power dissipation: 0.9W Gate charge: 17nC Polarisation: unipolar Technology: TrenchFET® Drain current: 3.2A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 93mΩ Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8812DB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V |
Produkt ist nicht verfügbar |
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SI8812DB-T2-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A Kind of package: reel; tape Pulsed drain current: 20A Power dissipation: 0.9W Gate charge: 17nC Polarisation: unipolar Technology: TrenchFET® Drain current: 3.2A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 93mΩ Mounting: SMD |
Produkt ist nicht verfügbar |