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SI8812DB-T2-E1

SI8812DB-T2-E1 Vishay Semiconductors


si8812db.pdf Hersteller: Vishay Semiconductors
MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
auf Bestellung 25429 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.02 EUR
61+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 52
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Technische Details SI8812DB-T2-E1 Vishay Semiconductors

Description: MOSFET N-CH 20V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V.

Weitere Produktangebote SI8812DB-T2-E1 nach Preis ab 0.44 EUR bis 1.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI8812DB-T2-E1 SI8812DB-T2-E1 Hersteller : Vishay Siliconix si8812db.pdf Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
27+ 0.97 EUR
100+ 0.72 EUR
500+ 0.57 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 24
SI8812DB-T2-E1 SI8812DB-T2-E1 Hersteller : Vishay si8812db.pdf Trans MOSFET N-CH 20V 3.2A 4-Pin Micro Foot T/R
Produkt ist nicht verfügbar
SI8812DB-T2-E1 Hersteller : VISHAY si8812db.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 93mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8812DB-T2-E1 SI8812DB-T2-E1 Hersteller : Vishay Siliconix si8812db.pdf Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Produkt ist nicht verfügbar
SI8812DB-T2-E1 Hersteller : VISHAY si8812db.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
On-state resistance: 93mΩ
Mounting: SMD
Produkt ist nicht verfügbar