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SI8819EDB-T2-E1

SI8819EDB-T2-E1 Vishay Semiconductors


si8819edb.pdf Hersteller: Vishay Semiconductors
MOSFET -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
auf Bestellung 421 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
50+1.05 EUR
61+ 0.86 EUR
100+ 0.58 EUR
500+ 0.44 EUR
1000+ 0.33 EUR
3000+ 0.3 EUR
Mindestbestellmenge: 50
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Technische Details SI8819EDB-T2-E1 Vishay Semiconductors

Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-MICRO FOOT® (0.8x0.8), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V.

Weitere Produktangebote SI8819EDB-T2-E1 nach Preis ab 0.27 EUR bis 0.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI8819EDB-T2-E1 Hersteller : Vishay Siliconix si8819edb.pdf Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
Mindestbestellmenge: 3000
SI8819EDB-T2-E1 Hersteller : Vishay Siliconix si8819edb.pdf Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
auf Bestellung 5990 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
34+ 0.77 EUR
100+ 0.46 EUR
500+ 0.43 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 27
SI8819EDB-T2-E1 Hersteller : VISHAY si8819edb.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A
Mounting: SMD
Technology: TrenchFET®
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.28Ω
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI8819EDB-T2-E1 Hersteller : VISHAY si8819edb.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A
Mounting: SMD
Technology: TrenchFET®
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.28Ω
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
Produkt ist nicht verfügbar