SI8819EDB-T2-E1 Vishay Semiconductors
auf Bestellung 421 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.05 EUR |
61+ | 0.86 EUR |
100+ | 0.58 EUR |
500+ | 0.44 EUR |
1000+ | 0.33 EUR |
3000+ | 0.3 EUR |
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Technische Details SI8819EDB-T2-E1 Vishay Semiconductors
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-MICRO FOOT® (0.8x0.8), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V.
Weitere Produktangebote SI8819EDB-T2-E1 nach Preis ab 0.27 EUR bis 0.99 EUR
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SI8819EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8819EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V |
auf Bestellung 5990 Stücke: Lieferzeit 21-28 Tag (e) |
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SI8819EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A Mounting: SMD Technology: TrenchFET® Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.28Ω Pulsed drain current: -15A Power dissipation: 0.9W Gate charge: 17nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8819EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A Mounting: SMD Technology: TrenchFET® Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.28Ω Pulsed drain current: -15A Power dissipation: 0.9W Gate charge: 17nC Polarisation: unipolar |
Produkt ist nicht verfügbar |