SI8821EDB-T2-E1 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
auf Bestellung 1990 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 1.09 EUR |
| 31+ | 0.85 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.32 EUR |
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Technische Details SI8821EDB-T2-E1 Vishay Siliconix
Description: MOSFET P-CH 30V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, CSPBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V.
Weitere Produktangebote SI8821EDB-T2-E1 nach Preis ab 0.26 EUR bis 1.11 EUR
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SI8821EDB-T2-E1 | Hersteller : Vishay Semiconductors |
MOSFET -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 |
auf Bestellung 8426 Stücke: Lieferzeit 14-28 Tag (e) |
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SI8821EDB-T2-E1 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 2.3A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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| SI8821EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A Mounting: SMD Drain-source voltage: -30V Drain current: -2.3A On-state resistance: 0.215Ω Type of transistor: P-MOSFET Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -15A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI8821EDB-T2-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SI8821EDB-T2-E1 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A Mounting: SMD Drain-source voltage: -30V Drain current: -2.3A On-state resistance: 0.215Ω Type of transistor: P-MOSFET Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -15A |
Produkt ist nicht verfügbar |