SI9410BDY-T1-E3

SI9410BDYT1E3

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Technische Details SI9410BDYT1E3

Description: MOSFET N-CH 30V 6.2A 8SOIC, Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET N-Channel, Metal Oxide, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.5W.

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SI9410BDYT1E3
Hersteller: VISHAY

9000 Stücke
SI9410BDY-T1-E3
Hersteller: VISHAY
0602+
72269.pdf
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SI9410BDY-T1-E3
Hersteller:

72269.pdf
60000 Stücke
SI9410BDY-T1-E3
SI9410BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.2A 8SOIC
Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
72269.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9410BDY-T1-E3
SI9410BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.2A 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Drain to Source Voltage (Vdss): 30V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
FET Type: MOSFET N-Channel, Metal Oxide
72269.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9410BDY-T1-E3
SI9410BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.2A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.1A, 10V
FET Type: MOSFET N-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 30V
72269.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen