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SI9410BDY-T1-GE3

SI9410BDY-T1-GE3 Vishay


72269.pdf Hersteller: Vishay
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
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Technische Details SI9410BDY-T1-GE3 Vishay

Description: MOSFET N-CH 30V 6.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 8.1A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V.

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SI9410BDY-T1-GE3 SI9410BDY-T1-GE3 Hersteller : Vishay 72269.pdf Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
SI9410BDY-T1-GE3 SI9410BDY-T1-GE3 Hersteller : Vishay Siliconix 72269.pdf Description: MOSFET N-CH 30V 6.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Produkt ist nicht verfügbar