SI9410BDY-T1-GE3

SI9410BDY-T1-GE3

SI9410BDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.2A 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 30V

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Technische Details SI9410BDY-T1-GE3

Description: MOSFET N-CH 30V 6.2A 8SOIC, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.5W, FET Type: MOSFET N-Channel, Metal Oxide, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Drain to Source Voltage (Vdss): 30V.

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