SI9410BDY-T1-GE3
SI9410BDY-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 6.2A 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 30V
verfügbar/auf Bestellung
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SI9410BDY-T1-GE3
Description: MOSFET N-CH 30V 6.2A 8SOIC, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.5W, FET Type: MOSFET N-Channel, Metal Oxide, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Drain to Source Voltage (Vdss): 30V.