SI9433BDY-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 275 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 275 Stücke

Lieferzeit 14-21 Tag (e)
Technische Details SI9433BDY-T1-GE3
Description: MOSFET P-CH 20V 4.5A 8-SOIC, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.3W (Ta), Vgs (Max): ±12V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).
Preis SI9433BDY-T1-GE3 ab 0.52 EUR bis 0.69 EUR
SI9433BDY-T1-GE3 Hersteller: Vishay Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R ![]() ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI9433BDY-T1-GE3 Hersteller: Vishay / Siliconix MOSFET 20V 6.2A 2.5W 40mohm @ 4.5V ![]() |
auf Bestellung 3324 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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SI9433BDY-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 20V 4.5A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.3W (Ta) Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) ![]() |
auf Bestellung 5322 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SI9433BDY-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 20V 4.5A 8SO Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V ![]() |
auf Bestellung 1 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SI9433BDY-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 20V 4.5A 8SO Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.3W (Ta) ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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