SI9433BDY-T1-GE3

SI9433BDY-T1-GE3

Hersteller: Vishay
Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R
72755.pdf 72755.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 275 Stücke
Lieferzeit 14-21 Tag (e)

235+ 0.69 EUR
249+ 0.63 EUR
250+ 0.61 EUR
267+ 0.55 EUR
270+ 0.52 EUR

Technische Details SI9433BDY-T1-GE3

Description: MOSFET P-CH 20V 4.5A 8-SOIC, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.3W (Ta), Vgs (Max): ±12V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI9433BDY-T1-GE3 ab 0.52 EUR bis 0.69 EUR

SI9433BDY-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R
72755.pdf 72755.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9433BDY-T1-GE3
SI9433BDY-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 20V 6.2A 2.5W 40mohm @ 4.5V
72755-241361.pdf
auf Bestellung 3324 Stücke
Lieferzeit 14-28 Tag (e)
SI9433BDY-T1-GE3
SI9433BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
72755.pdf
auf Bestellung 5322 Stücke
Lieferzeit 21-28 Tag (e)
SI9433BDY-T1-GE3
SI9433BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8SO
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
72755.pdf
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
SI9433BDY-T1-GE3
SI9433BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8SO
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
72755.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen