SI9435BDY-T1-E3 VISHAY
Hersteller: VISHAYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2780 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 133+ | 0.54 EUR |
| 162+ | 0.44 EUR |
| 172+ | 0.42 EUR |
| 2500+ | 0.41 EUR |
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Produktbewertung abgeben
Technische Details SI9435BDY-T1-E3 VISHAY
Description: MOSFET P-CH 30V 4.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V.
Weitere Produktangebote SI9435BDY-T1-E3 nach Preis ab 0.41 EUR bis 2.08 EUR
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SI9435BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2780 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9435BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2780 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9435BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4.1A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V |
auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI9435BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V |
auf Bestellung 12935 Stücke: Lieferzeit 21-28 Tag (e) |
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SI9435BDY-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 30V 5.7A 0.042Ohm |
auf Bestellung 20803 Stücke: Lieferzeit 14-28 Tag (e) |
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SI9435BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI9435BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI9435BDY-T1-E3 Produktcode: 130444 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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SI9435BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI9435BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |