SI9926BDY-T1-E3 Siliconix
Hersteller: Siliconix
Transistor 2xN-Channel MOSFET; 20V; 12V; 30mOhm; 6,2A; 1,14W; -55°C ~ 150°C; SI9926BDY-T1-E3, SI9926BDY-T1-GE3 SI9926BDY TSI9926bdy
Anzahl je Verpackung: 25 Stücke
Transistor 2xN-Channel MOSFET; 20V; 12V; 30mOhm; 6,2A; 1,14W; -55°C ~ 150°C; SI9926BDY-T1-E3, SI9926BDY-T1-GE3 SI9926BDY TSI9926bdy
Anzahl je Verpackung: 25 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1 EUR |
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Technische Details SI9926BDY-T1-E3 Siliconix
Description: MOSFET 2N-CH 20V 6.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.14W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.2A, Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC.
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SI9926BDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 20V 6.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI9926BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.14W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI9926BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.14W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |