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SIA413DJ-T1-GE3

SIA413DJ-T1-GE3 Vishay Siliconix

SiA413DJ_RevD_21-May-12.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 171000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.88 EUR
6000+ 0.84 EUR
9000+ 0.8 EUR
Mindestbestellmenge: 3000
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Technische Details SIA413DJ-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 12V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V.

Weitere Produktangebote SIA413DJ-T1-GE3 nach Preis ab 0.88 EUR bis 2.13 EUR

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SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 Hersteller : Vishay Semiconductors SiA413DJ_RevD_21-May-12.pdf MOSFET 12V 12A 19W 29mohm @ 4.5V
auf Bestellung 27540 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
27+1.93 EUR
32+ 1.65 EUR
100+ 1.3 EUR
500+ 1.21 EUR
1000+ 0.97 EUR
3000+ 0.92 EUR
6000+ 0.88 EUR
Mindestbestellmenge: 27
SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 Hersteller : Vishay Siliconix SiA413DJ_RevD_21-May-12.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 173789 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.13 EUR
15+ 1.74 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 13
SIA413DJ-T1-GE3 SiA413DJ_RevD_21-May-12.pdf
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA413DJ-T1-GE3 Hersteller : VISHAY SiA413DJ_RevD_21-May-12.pdf SIA413DJ-T1-GE3 SMD P channel transistors
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SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 Hersteller : Vishay sia413dj.pdf Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R
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