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SIA421DJ-T1-GE3

SIA421DJ-T1-GE3 Vishay Siliconix


sia421dj.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 48000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.98 EUR
6000+ 0.93 EUR
15000+ 0.9 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SIA421DJ-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V.

Weitere Produktangebote SIA421DJ-T1-GE3 nach Preis ab 1.02 EUR bis 2.31 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 Hersteller : Vishay Semiconductors sia421dj.pdf MOSFET -30V Vds 20V Vgs PowerPAK SC-70
auf Bestellung 5934 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.18 EUR
27+ 1.95 EUR
100+ 1.56 EUR
500+ 1.34 EUR
1000+ 1.08 EUR
3000+ 1.04 EUR
6000+ 1.02 EUR
Mindestbestellmenge: 24
SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 Hersteller : Vishay Siliconix sia421dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 53213 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.31 EUR
13+ 2.07 EUR
100+ 1.61 EUR
500+ 1.33 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 12
SIA421DJ-T1-GE3 Hersteller : VISHAY sia421dj.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA421DJ-T1-GE3 Hersteller : VISHAY sia421dj.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar