SIA427ADJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.43 EUR |
| 6000+ | 0.4 EUR |
| 9000+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIA427ADJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 8V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V, Power Dissipation (Max): 19W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V.
Weitere Produktangebote SIA427ADJ-T1-GE3 nach Preis ab 0.48 EUR bis 1.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIA427ADJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V |
auf Bestellung 17320 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||
 |
SIA427ADJ-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET -8V Vds 5V Vgs PowerPAK SC-70 |
auf Bestellung 6308 Stücke: Lieferzeit 14-28 Tag (e) |
|||||||||||||
| SIA427ADJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W Mounting: SMD Case: PowerPAK® SC70 Kind of package: reel; tape Power dissipation: 12W Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -50A Drain-source voltage: -8V Drain current: -12A On-state resistance: 16mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| SIA427ADJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W Mounting: SMD Case: PowerPAK® SC70 Kind of package: reel; tape Power dissipation: 12W Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -50A Drain-source voltage: -8V Drain current: -12A On-state resistance: 16mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |