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SIA429DJT-T1-GE3

SIA429DJT-T1-GE3 Vishay Siliconix


sia429dj.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
6000+ 0.46 EUR
9000+ 0.43 EUR
Mindestbestellmenge: 3000
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Technische Details SIA429DJT-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V.

Weitere Produktangebote SIA429DJT-T1-GE3 nach Preis ab 0.54 EUR bis 1.52 EUR

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Preis ohne MwSt
SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 Hersteller : Vishay Siliconix sia429dj.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 Hersteller : Vishay Semiconductors sia429dj-1761611.pdf MOSFET -20V Vds 8V Vgs Thin PowerPAK SC-70
auf Bestellung 20675 Stücke:
Lieferzeit 874-888 Tag (e)
Anzahl Preis ohne MwSt
35+1.52 EUR
40+ 1.3 EUR
100+ 0.97 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
3000+ 0.59 EUR
6000+ 0.58 EUR
Mindestbestellmenge: 35
SIA429DJT-T1-GE3 Hersteller : VISHAY sia429dj.pdf SIA429DJT-T1-GE3 SMD P channel transistors
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SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 Hersteller : Vishay sia429dj.pdf Trans MOSFET P-CH 20V 10.6A 6-Pin PowerPAK SC-70 T/R
Produkt ist nicht verfügbar
SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 Hersteller : Vishay sia429dj.pdf Trans MOSFET P-CH 20V 10.6A 6-Pin PowerPAK SC-70 T/R
Produkt ist nicht verfügbar
SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 Hersteller : Vishay sia429dj.pdf Trans MOSFET P-CH 20V 10.6A 6-Pin PowerPAK SC-70 T/R
Produkt ist nicht verfügbar