SIA445EDJ-T1-GE3 Vishay Semiconductors
auf Bestellung 8939 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 1.45 EUR |
| 40+ | 1.3 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.63 EUR |
| 3000+ | 0.61 EUR |
| 6000+ | 0.57 EUR |
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Technische Details SIA445EDJ-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 7A, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 10 V.
Weitere Produktangebote SIA445EDJ-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIA445EDJ-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIA445EDJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA445EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 7A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 10 V |
Produkt ist nicht verfügbar |
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SIA445EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 7A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 10 V |
Produkt ist nicht verfügbar |
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| SIA445EDJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |