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SIA456DJ-T1-GE3

SIA456DJ-T1-GE3 Vishay Siliconix


sia456dj.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
auf Bestellung 22200 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.89 EUR
6000+ 0.85 EUR
9000+ 0.81 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SIA456DJ-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 200V 2.6A PPAK SC70, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V.

Weitere Produktangebote SIA456DJ-T1-GE3 nach Preis ab 0.95 EUR bis 2.18 EUR

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SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 Hersteller : Vishay Siliconix sia456dj.pdf Description: MOSFET N-CH 200V 2.6A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
auf Bestellung 23400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
15+ 1.77 EUR
100+ 1.37 EUR
500+ 1.17 EUR
1000+ 0.95 EUR
Mindestbestellmenge: 13
SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 Hersteller : Vishay Semiconductors sia456dj.pdf MOSFET 200V Vds 16V Vgs PowerPAK SC-70
auf Bestellung 18000 Stücke:
Lieferzeit 266-280 Tag (e)
Anzahl Preis ohne MwSt
24+2.18 EUR
30+ 1.78 EUR
100+ 1.39 EUR
500+ 1.18 EUR
1000+ 1.12 EUR
6000+ 1.1 EUR
Mindestbestellmenge: 24
SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 Hersteller : Vishay sia456dj.pdf Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R
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SIA456DJ-T1-GE3 Hersteller : Vishay sia456dj.pdf Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R
Produkt ist nicht verfügbar
SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 Hersteller : Vishay sia456dj.pdf Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R
Produkt ist nicht verfügbar
SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 Hersteller : Vishay sia456dj.pdf Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R
Produkt ist nicht verfügbar
SIA456DJ-T1-GE3 Hersteller : VISHAY sia456dj.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA456DJ-T1-GE3 Hersteller : VISHAY sia456dj.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar