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SIA459EDJ-T1-GE3

SIA459EDJ-T1-GE3 Vishay Siliconix


sia459edj.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.39 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details SIA459EDJ-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 9A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V.

Weitere Produktangebote SIA459EDJ-T1-GE3 nach Preis ab 0.34 EUR bis 1.16 EUR

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SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 Hersteller : Vishay Siliconix sia459edj.pdf Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
auf Bestellung 5998 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
27+ 0.98 EUR
100+ 0.68 EUR
500+ 0.53 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 23
SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 Hersteller : Vishay / Siliconix sia459edj.pdf MOSFET -20V Vds 12V Vgs PowerPAK SC-70
auf Bestellung 129056 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
45+1.16 EUR
53+ 0.99 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.43 EUR
3000+ 0.37 EUR
9000+ 0.34 EUR
Mindestbestellmenge: 45
SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 Hersteller : VISHAY sia459edj.pdf Description: VISHAY - SIA459EDJ-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 9 A, 0.028 ohm, PowerPAK SC70, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20
Dauer-Drainstrom Id: 9
Rds(on)-Messspannung Vgs: 4.5
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 15.6
Bauform - Transistor: PowerPAK SC70
Anzahl der Pins: 6
Produktpalette: -
Wandlerpolarität: p-Kanal
Betriebswiderstand, Rds(on): 0.028
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: -
SVHC: No SVHC (19-Jan-2021)
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
SIA459EDJ-T1-GE3 Hersteller : VISHAY sia459edj.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA459EDJ-T1-GE3 Hersteller : VISHAY sia459edj.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar