SIA459EDJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.39 EUR |
Produktrezensionen
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Technische Details SIA459EDJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V.
Weitere Produktangebote SIA459EDJ-T1-GE3 nach Preis ab 0.34 EUR bis 1.16 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIA459EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 9A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V |
auf Bestellung 5998 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA459EDJ-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 |
auf Bestellung 129056 Stücke: Lieferzeit 14-28 Tag (e) |
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SIA459EDJ-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIA459EDJ-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 9 A, 0.028 ohm, PowerPAK SC70, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 9 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 15.6 Bauform - Transistor: PowerPAK SC70 Anzahl der Pins: 6 Produktpalette: - Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.028 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: - SVHC: No SVHC (19-Jan-2021) |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA459EDJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -40A Power dissipation: 10W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA459EDJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -40A Power dissipation: 10W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |