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SIA461DJ-T1-GE3

SIA461DJ-T1-GE3 Vishay Siliconix


sia461dj.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 48000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.38 EUR
Mindestbestellmenge: 3000
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Technische Details SIA461DJ-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V, Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V.

Weitere Produktangebote SIA461DJ-T1-GE3 nach Preis ab 0.42 EUR bis 1.07 EUR

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SIA461DJ-T1-GE3 SIA461DJ-T1-GE3 Hersteller : Vishay Siliconix sia461dj.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.92 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 25
SIA461DJ-T1-GE3 SIA461DJ-T1-GE3 Hersteller : Vishay sia461dj.pdf Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 3662 Stücke:
Lieferzeit 14-21 Tag (e)
SIA461DJ-T1-GE3 SIA461DJ-T1-GE3 Hersteller : Vishay Semiconductors sia461dj-1764315.pdf MOSFET -20V Vds 8V Vgs PowerPAK SC-70
auf Bestellung 45249 Stücke:
Lieferzeit 14-28 Tag (e)
SIA461DJ-T1-GE3 Hersteller : VISHAY sia461dj.pdf SIA461DJ-T1-GE3 SMD P channel transistors
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