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SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3 Vishay Siliconix


sia477edjt.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V
auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.37 EUR
6000+ 0.35 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 3000
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Technische Details SIA477EDJT-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 12V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V, Power Dissipation (Max): 19W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Single, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V.

Weitere Produktangebote SIA477EDJT-T1-GE3 nach Preis ab 0.37 EUR bis 1.11 EUR

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SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 Hersteller : Vishay Siliconix sia477edjt.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V
auf Bestellung 13917 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
28+ 0.93 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 24
SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 Hersteller : Vishay Semiconductors sia477edjt.pdf MOSFET -12V Vds 8V Vgs PowerPAK SC-70-6L
auf Bestellung 13179 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.11 EUR
55+ 0.95 EUR
100+ 0.66 EUR
500+ 0.52 EUR
1000+ 0.42 EUR
3000+ 0.37 EUR
Mindestbestellmenge: 47
SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 Hersteller : Vishay sia477edjt.pdf Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 EP T/R
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SIA477EDJT-T1-GE3 Hersteller : VISHAY sia477edjt.pdf SIA477EDJT-T1-GE3 SMD P channel transistors
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