SIA483DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
auf Bestellung 81000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.37 EUR |
| 9000+ | 0.35 EUR |
| 30000+ | 0.34 EUR |
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Technische Details SIA483DJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V.
Weitere Produktangebote SIA483DJ-T1-GE3 nach Preis ab 0.35 EUR bis 1.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIA483DJ-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -30V Vds 20V Vgs PowerPAK SC-70 |
auf Bestellung 67217 Stücke: Lieferzeit 14-28 Tag (e) |
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SIA483DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V |
auf Bestellung 85785 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA483DJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 10A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIA483DJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -40A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIA483DJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -40A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |