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SIA527DJ-T1-GE3

SIA527DJ-T1-GE3 Vishay Siliconix


sia527dj.pdf Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.43 EUR
6000+ 0.4 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details SIA527DJ-T1-GE3 Vishay Siliconix

Description: MOSFET N/P-CH 12V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.

Weitere Produktangebote SIA527DJ-T1-GE3 nach Preis ab 0.48 EUR bis 1.56 EUR

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SIA527DJ-T1-GE3 SIA527DJ-T1-GE3 Hersteller : Vishay Siliconix sia527dj.pdf Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 12600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.08 EUR
100+ 0.75 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SIA527DJ-T1-GE3 SIA527DJ-T1-GE3 Hersteller : Vishay Semiconductors sia527dj-1764747.pdf MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR
auf Bestellung 6196 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
34+1.56 EUR
41+ 1.29 EUR
100+ 0.98 EUR
500+ 0.77 EUR
Mindestbestellmenge: 34
SIA527DJ-T1-GE3 Hersteller : VISHAY sia527dj.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA527DJ-T1-GE3 Hersteller : VISHAY sia527dj.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar