SIA810DJ-T1-GE3

SIA810DJ-T1-GE3

SIA810DJ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)

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Technische Details SIA810DJ-T1-GE3

Description: MOSFET N-CH 20V 4.5A SC70-6, Power - Max: 6.5W, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Drain to Source Voltage (Vdss): 20V, FET Feature: Schottky Diode (Isolated), FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: PowerPAK® SC-70-6 Dual, Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ).

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