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SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3 Vishay Siliconix


sia817edj.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 1806 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
27+ 0.99 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
Produktrezensionen
Produktbewertung abgeben

Technische Details SIA817EDJ-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 4.5A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V.

Weitere Produktangebote SIA817EDJ-T1-GE3 nach Preis ab 0.35 EUR bis 1.19 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 Hersteller : Vishay Semiconductors sia817edj.pdf MOSFET -30V Vds 12V Vgs PowerPAK SC-70
auf Bestellung 50975 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
44+1.19 EUR
52+ 1.01 EUR
100+ 0.7 EUR
500+ 0.55 EUR
1000+ 0.44 EUR
3000+ 0.37 EUR
9000+ 0.35 EUR
Mindestbestellmenge: 44
SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 Hersteller : Vishay sia817edj.pdf Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 T/R
Produkt ist nicht verfügbar
SIA817EDJ-T1-GE3 Hersteller : VISHAY sia817edj.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 6.5W
Gate-source voltage: ±12V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 Hersteller : Vishay sia817edj.pdf Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 T/R
Produkt ist nicht verfügbar
SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 Hersteller : Vishay sia817edj.pdf Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 T/R
Produkt ist nicht verfügbar
SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 Hersteller : Vishay Siliconix sia817edj.pdf Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Produkt ist nicht verfügbar
SIA817EDJ-T1-GE3 Hersteller : VISHAY sia817edj.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 6.5W
Gate-source voltage: ±12V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar