SIA907EDJT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Not For New Designs
auf Bestellung 748 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 1.27 EUR |
| 24+ | 1.09 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
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Technische Details SIA907EDJT-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Not For New Designs.
Weitere Produktangebote SIA907EDJT-T1-GE3 nach Preis ab 0.38 EUR bis 1.28 EUR
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Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R |
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SIA907EDJT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R |
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SIA907EDJT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R |
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SIA907EDJT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.5A SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Not For New Designs |
Produkt ist nicht verfügbar |