SIA910EDJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Description: MOSFET 2N-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.34 EUR |
6000+ | 0.32 EUR |
9000+ | 0.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIA910EDJ-T1-GE3 Vishay Siliconix
Description: VISHAY - SIA910EDJ-T1-GE3 - Dual-MOSFET, n-Kanal, 12 V, 12 V, 4.5 A, 4.5 A, 0.023 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 4.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 12V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 4.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.023ohm, Verlustleistung, p-Kanal: 7.8W, Drain-Source-Spannung Vds, n-Kanal: 12V, euEccn: NLR, Bauform - Transistor: PowerPAK SC-70, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 7.8W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote SIA910EDJ-T1-GE3 nach Preis ab 0.32 EUR bis 0.9 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIA910EDJ-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFETs 12V Vds 8V Vgs PowerPAK SC-70 |
auf Bestellung 172665 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SIA910EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 12V 4.5A SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
auf Bestellung 24691 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SIA910EDJ-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIA910EDJ-T1-GE3 - Dual-MOSFET, n-Kanal, 12 V, 12 V, 4.5 A, 4.5 A, 0.023 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 12V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.023ohm Verlustleistung, p-Kanal: 7.8W Drain-Source-Spannung Vds, n-Kanal: 12V euEccn: NLR Bauform - Transistor: PowerPAK SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 7.8W Betriebstemperatur, max.: 150°C SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 52848 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SIA910EDJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
SIA910EDJ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 4.5A; Idm: 20A Polarisation: unipolar Kind of package: reel; tape Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD Drain-source voltage: 12V Drain current: 4.5A On-state resistance: 42mΩ Type of transistor: N-MOSFET x2 Power dissipation: 7.8W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
SIA910EDJ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 4.5A; Idm: 20A Polarisation: unipolar Kind of package: reel; tape Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD Drain-source voltage: 12V Drain current: 4.5A On-state resistance: 42mΩ Type of transistor: N-MOSFET x2 Power dissipation: 7.8W |
Produkt ist nicht verfügbar |