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SIA911ADJ-T1-GE3

SIA911ADJ-T1-GE3 Vishay / Siliconix


sia911ad-279731.pdf Hersteller: Vishay / Siliconix
MOSFET 20V 4.5A 6.5W
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Lieferzeit 10-14 Tag (e)
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Technische Details SIA911ADJ-T1-GE3 Vishay / Siliconix

Description: MOSFET 2P-CH 20V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V, Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual.

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SIA911ADJ-T1-GE3 SIA911ADJ-T1-GE3 Hersteller : Vishay Siliconix sia911ad.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
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