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SIA913ADJ-T1-GE3

SIA913ADJ-T1-GE3 Vishay Siliconix

sia913adj.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
6000+ 0.45 EUR
9000+ 0.42 EUR
Mindestbestellmenge: 3000
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Technische Details SIA913ADJ-T1-GE3 Vishay Siliconix

Description: MOSFET 2P-CH 12V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6.5W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V, Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.

Weitere Produktangebote SIA913ADJ-T1-GE3 nach Preis ab 0.54 EUR bis 1.52 EUR

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SIA913ADJ-T1-GE3 SIA913ADJ-T1-GE3 Hersteller : Vishay Siliconix sia913adj.pdf Description: MOSFET 2P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 17350 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.21 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIA913ADJ-T1-GE3 SIA913ADJ-T1-GE3 Hersteller : Vishay Semiconductors sia913adj.pdf MOSFET 12V 4.5A 6.5W 61mohm @ 4.5V
auf Bestellung 17990 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.52 EUR
40+ 1.3 EUR
100+ 0.97 EUR
500+ 0.76 EUR
1000+ 0.59 EUR
3000+ 0.54 EUR
Mindestbestellmenge: 35
SIA913ADJ-T1-GE3 sia913adj.pdf
auf Bestellung 102000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA913ADJ-T1-GE3 Hersteller : VISHAY sia913adj.pdf SIA913ADJ-T1-GE3 Multi channel transistors
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