SIA931DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description: MOSFET 2P-CH 30V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
auf Bestellung 54000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.41 EUR |
6000+ | 0.39 EUR |
9000+ | 0.36 EUR |
30000+ | 0.35 EUR |
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Technische Details SIA931DJ-T1-GE3 Vishay Siliconix
Description: VISHAY - SIA931DJ-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 4.5 A, 4.5 A, 0.052 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 4.5A, hazardous: false, rohsPhthalatesCompliant: YES, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 4.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.052ohm, Verlustleistung, p-Kanal: 7.8W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Anzahl der Pins: 6Pins, Drain-Source-Durchgangswiderstand, n-Kanal: 0.052ohm, productTraceability: No, Verlustleistung, n-Kanal: 7.8W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SIA931DJ-T1-GE3 nach Preis ab 0.44 EUR bis 1.22 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIA931DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 4.5A SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual |
auf Bestellung 57018 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA931DJ-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 |
auf Bestellung 348462 Stücke: Lieferzeit 14-28 Tag (e) |
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SIA931DJ-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIA931DJ-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 4.5 A, 4.5 A, 0.052 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.5A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.052ohm Verlustleistung, p-Kanal: 7.8W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 6Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.052ohm productTraceability: No Verlustleistung, n-Kanal: 7.8W Betriebstemperatur, max.: 150°C |
auf Bestellung 270910 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA931DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 4.3A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA931DJ-T1-GE3 | Hersteller : VISHAY | SIA931DJ-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |