SIA938DJT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.51 EUR |
| 6000+ | 0.49 EUR |
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Technische Details SIA938DJT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W (Ta), 7.8W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V, Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Weitere Produktangebote SIA938DJT-T1-GE3 nach Preis ab 0.46 EUR bis 1.55 EUR
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SIA938DJT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.5A SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta), 7.8W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
auf Bestellung 11793 Stücke: Lieferzeit 21-28 Tag (e) |
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Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 7.8W On-state resistance: 48mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
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| SIA938DJT-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 7.8W On-state resistance: 48mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced |
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