SIAA00DJ-T1-GE3

SIAA00DJ-T1-GE3

SIAA00DJ-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 25V Vds 16V Vgs PowerPAK SC-70
siaa00dj-1766539.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6020 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SIAA00DJ-T1-GE3

Description: MOSFET N-CHAN 25V, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs (Max): +16V, -12V, Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 12.5V, Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® SC-70-6 Single, Package / Case: PowerPAK® SC-70-6.

Preis SIAA00DJ-T1-GE3 ab 0 EUR bis 0 EUR

SIAA00DJ-T1-GE3
SIAA00DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 12.5V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
siaa00dj.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SIAA00DJ-T1-GE3
SIAA00DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25V
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 12.5V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
siaa00dj.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SIAA00DJ-T1-GE3
SIAA00DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25V
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 12.5V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
siaa00dj.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)