SIAA40DJ-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 11695 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 11695 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIAA40DJ-T1-GE3
Description: MOSFET N-CH 40V 30A SC70-6, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Base Part Number: SIAA40, Package / Case: PowerPAK® SC-70-6, Supplier Device Package: PowerPAK® SC-70-6 Single, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 19.2W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V, Part Status: Active, Packaging: Tape & Reel (TR).
Preis SIAA40DJ-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 30A SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 19.2W (Tc) Part Status: Active Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Base Part Number: SIAA40 Package / Case: PowerPAK® SC-70-6 
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auf Bestellung 3823 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 30A SC70-6 Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Base Part Number: SIAA40 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 19.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Part Status: Active Packaging: Tape & Reel (TR)
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 30A SC70-6 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 19.2W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Cut Tape (CT)
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auf Bestellung 5931 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 30A SC70-6 Power Dissipation (Max): 19.2W (Tc) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Part Status: Active
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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