SIAA40DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 30A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
auf Bestellung 5363 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 1.77 EUR |
| 17+ | 1.56 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIAA40DJ-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V, Power Dissipation (Max): 19.2W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Single, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V.
Weitere Produktangebote SIAA40DJ-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SIAA40DJ-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 40V Vds 20V Vgs PowerPAK SC-70 |
auf Bestellung 11695 Stücke: Lieferzeit 14-28 Tag (e) |
|
| SIAA40DJ-T1-GE3 | Hersteller : VISHAY |
SIAA40DJ-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
|
|
SIAA40DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 30A PPAK SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V Power Dissipation (Max): 19.2W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Single Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V |
Produkt ist nicht verfügbar |