SIAA40DJ-T1-GE3 Vishay Semiconductors
auf Bestellung 4472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.85 EUR |
| 10+ | 0.75 EUR |
| 100+ | 0.55 EUR |
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Technische Details SIAA40DJ-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 30A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V, Power Dissipation (Max): 19.2W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Single, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V.
Weitere Produktangebote SIAA40DJ-T1-GE3 nach Preis ab 0.51 EUR bis 1.2 EUR
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SIAA40DJ-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 40V 30A PPAK SC70-6Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V Power Dissipation (Max): 19.2W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Single Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V |
auf Bestellung 5363 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIAA40DJ-T1-GE3 | Hersteller : VISHAY |
SIAA40DJ-T1-GE3 SMD N channel transistors |
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SIAA40DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 30A PPAK SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V Power Dissipation (Max): 19.2W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Single Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V |
Produkt ist nicht verfügbar |