SIB406EDK-T1-GE3

SIB406EDK-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 20V 6A 6-Pin PowerPAK SC-75 T/R
sib406ed.pdf sib406ed.pdf
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Technische Details SIB406EDK-T1-GE3

Description: MOSFET N-CH 20V 6A PPAK SC75-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V, Power Dissipation (Max): 1.95W (Ta), 10W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V.

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SIB406EDK-T1-GE3
SIB406EDK-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 12V Vgs PowerPAK SC-75
VISH_S_A0012037936_1-2572500.pdf
auf Bestellung 3125 Stücke
Lieferzeit 14-28 Tag (e)
SIB406EDK-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 20V 6A 6-Pin PowerPAK SC-75 T/R
sib406ed.pdf sib406ed.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB406EDK-T1-GE3
SIB406EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SC-75-6
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
sib406ed.pdf
auf Bestellung 7848 Stücke
Lieferzeit 21-28 Tag (e)
SIB406EDK-T1-GE3
SIB406EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
sib406ed.pdf
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
SIB406EDK-T1-GE3
SIB406EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK SC75-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
sib406ed.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen