SIB406EDK-T1-GE3 Vishay Semiconductors
auf Bestellung 13131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.33 EUR |
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Technische Details SIB406EDK-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 20V 6A PPAK SC75-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V, Power Dissipation (Max): 1.95W (Ta), 10W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V.
Weitere Produktangebote SIB406EDK-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIB406EDK-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 20V 6A PPAK SC75-6Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Power Dissipation (Max): 1.95W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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SIB406EDK-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 6A 6-Pin PowerPAK SC-75 T/R |
Produkt ist nicht verfügbar |
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| SIB406EDK-T1-GE3 | Hersteller : VISHAY |
SIB406EDK-T1-GE3 SMD N channel transistors |
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SIB406EDK-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 6A PPAK SC75-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Power Dissipation (Max): 1.95W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V |
Produkt ist nicht verfügbar |