SIB406EDK-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SIB406EDK-T1-GE3
Description: MOSFET N-CH 20V 6A PPAK SC75-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V, Power Dissipation (Max): 1.95W (Ta), 10W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V.
Preis SIB406EDK-T1-GE3 ab 0 EUR bis 0 EUR
SIB406EDK-T1-GE3 Hersteller: Vishay Semiconductors MOSFET 20V Vds 12V Vgs PowerPAK SC-75 ![]() |
auf Bestellung 3125 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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SIB406EDK-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 20V 6A 6-Pin PowerPAK SC-75 T/R ![]() ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIB406EDK-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 6A SC-75-6 FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 10W Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V ![]() |
auf Bestellung 7848 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SIB406EDK-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 6A PPAK SC75-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Power Dissipation (Max): 1.95W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V ![]() |
auf Bestellung 5 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SIB406EDK-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 6A PPAK SC75-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Power Dissipation (Max): 1.95W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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