SIB417EDK-T1-GE3

SIB417EDK-T1-GE3

Hersteller:

sib417ed.pdf sib417ed.pdf
verfügbar/auf Bestellung
2900 Stücke

Technische Details SIB417EDK-T1-GE3

Description: MOSFET P-CH 8V 9A SC75-6, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 58mOhm @ 5.8A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V, Vgs (Max): ±5V, Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V, Power Dissipation (Max): 2.4W (Ta), 13W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® SC-75-6L Single, Package / Case: PowerPAK® SC-75-6L, Base Part Number: SIB417.

Preis SIB417EDK-T1-GE3 ab 0 EUR bis 0 EUR

SIB417EDK-T1-GE3
SIB417EDK-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 8.0V 9.0A 13W 58mohm @ 4.5V
sib417ed-244599.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB417EDK-T1-GE3
SIB417EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Base Part Number: SIB417
sib417ed.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB417EDK-T1-GE3
SIB417EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A SC75-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
sib417ed.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB417EDK-T1-GE3
SIB417EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A SC75-6
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V
sib417ed.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen