Technische Details SIB417EDK-T1-GE3
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -9A; Idm: -15A; 13W, Mounting: SMD, Kind of package: reel; tape, Power dissipation: 13W, Polarisation: unipolar, Gate charge: 12nC, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±5V, Pulsed drain current: -15A, Drain-source voltage: -8V, Drain current: -9A, On-state resistance: 0.25Ω, Type of transistor: P-MOSFET, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SIB417EDK-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIB417EDK-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -9A; Idm: -15A; 13W Mounting: SMD Kind of package: reel; tape Power dissipation: 13W Polarisation: unipolar Gate charge: 12nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -15A Drain-source voltage: -8V Drain current: -9A On-state resistance: 0.25Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIB417EDK-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 8V 9A 6-Pin PowerPAK SC-75 T/R |
Produkt ist nicht verfügbar |
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SIB417EDK-T1-GE3 | Hersteller : Vishay Siliconix | Description: MOSFET P-CH 8V 9A PPAK SC75-6 |
Produkt ist nicht verfügbar |
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SIB417EDK-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET 8.0V 9.0A 13W 58mohm @ 4.5V |
Produkt ist nicht verfügbar |
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SIB417EDK-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -9A; Idm: -15A; 13W Mounting: SMD Kind of package: reel; tape Power dissipation: 13W Polarisation: unipolar Gate charge: 12nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -15A Drain-source voltage: -8V Drain current: -9A On-state resistance: 0.25Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |