SIB417EDK-T1-GE3
SIB417EDK-T1-GE3
Hersteller:
verfügbar/auf Bestellung
2900 Stücke
2900 Stücke
Technische Details SIB417EDK-T1-GE3
Description: MOSFET P-CH 8V 9A SC75-6, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 58mOhm @ 5.8A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V, Vgs (Max): ±5V, Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V, Power Dissipation (Max): 2.4W (Ta), 13W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® SC-75-6L Single, Package / Case: PowerPAK® SC-75-6L, Base Part Number: SIB417.
Preis SIB417EDK-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay / Siliconix MOSFET 8.0V 9.0A 13W 58mohm @ 4.5V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 8V 9A SC75-6 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 58mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Base Part Number: SIB417
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 8V 9A SC75-6 Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 13W Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 8V 9A SC75-6 Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 13W Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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