SIB422EDK-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 9A PPAK SC75-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.39 EUR |
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Technische Details SIB422EDK-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 9A PPAK SC75-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V, Power Dissipation (Max): 2.5W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V.
Weitere Produktangebote SIB422EDK-T1-GE3 nach Preis ab 0.41 EUR bis 1.19 EUR
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SIB422EDK-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 9A PPAK SC75-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 2.5W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V |
auf Bestellung 4570 Stücke: Lieferzeit 21-28 Tag (e) |
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SIB422EDK-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 20V Vds 8V Vgs PowerPAK SC-75 |
auf Bestellung 4069 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SIB422EDK-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 9A 6-Pin PowerPAK SC-70 T/R |
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| SIB422EDK-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 9A Pulsed drain current: 25A Power dissipation: 13W Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIB422EDK-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 9A Pulsed drain current: 25A Power dissipation: 13W Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |