SIB456DK-T1-GE3 Vishay Semiconductors
auf Bestellung 15997 Stücke:
Lieferzeit 826-840 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 42+ | 1.25 EUR |
| 50+ | 1.06 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.52 EUR |
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Technische Details SIB456DK-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 100V 6.3A PPAK SC75, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V, Power Dissipation (Max): 2.4W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V.
Weitere Produktangebote SIB456DK-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIB456DK-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 100V 6.3A PPAK SC75Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V |
auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIB456DK-T1-GE3 | Hersteller : VISHAY |
SIB456DK-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| SIB456DK-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 6.3A 6-Pin PowerPAK SC-75 T/R |
Produkt ist nicht verfügbar |
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SIB456DK-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 6.3A PPAK SC75 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V |
Produkt ist nicht verfügbar |