auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.33 EUR |
| 10+ | 2.82 EUR |
| 100+ | 2.38 EUR |
| 250+ | 2.29 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.9 EUR |
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Technische Details SIDR104ADP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 100V 18.8A/81A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V, Power Dissipation (Max): 5.4W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V.
Weitere Produktangebote SIDR104ADP-T1-RE3 nach Preis ab 1.8 EUR bis 4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIDR104ADP-T1-RE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 100V 18.8A/81A PPAKPackaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR104ADP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 18.8A/81A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V |
auf Bestellung 5970 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIDR104ADP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIDR104ADP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |