SIDR140DP-T1-GE3 Vishay Semiconductors
auf Bestellung 8865 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.72 EUR |
| 11+ | 4.78 EUR |
| 100+ | 3.8 EUR |
| 250+ | 3.51 EUR |
| 500+ | 3.2 EUR |
| 1000+ | 2.73 EUR |
| 3000+ | 2.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIDR140DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 25V 79A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V.
Weitere Produktangebote SIDR140DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SIDR140DP-T1-GE3 | Hersteller : VISHAY |
 SIDR140DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
.jpg "SIDR140DP-T1-GE3") |
SIDR140DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 79A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V |
Produkt ist nicht verfügbar |
|
|
|
SIDR140DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 79A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V |
Produkt ist nicht verfügbar |