SIDR392DP-T1-GE3

SIDR392DP-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 30V 82A 8-Pin PowerPAK SO EP T/R
sidr392dp.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6000 Stücke
Lieferzeit 14-21 Tag (e)
49+ 3.39 EUR
55+ 2.78 EUR
57+ 2.61 EUR
100+ 2.09 EUR
250+ 1.99 EUR
500+ 1.7 EUR
1000+ 1.52 EUR
3000+ 1.49 EUR

Technische Details SIDR392DP-T1-GE3

Description: MOSFET N-CH 30V 82A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V.

Preis SIDR392DP-T1-GE3 ab 1.49 EUR bis 7.38 EUR

SIDR392DP-T1-GE3
SIDR392DP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
sidr392dp-1766582.pdf
auf Bestellung 25 Stücke
Lieferzeit 14-28 Tag (e)
8+ 7.38 EUR
10+ 6.66 EUR
25+ 6.29 EUR
100+ 5.36 EUR
SIDR392DP-T1-GE3
SIDR392DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 82A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
sidr392dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR392DP-T1-GE3
SIDR392DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 82A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
sidr392dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen