SIDR5102EP-T1-RE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Drain-source voltage: 100V
Drain current: 126A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Drain-source voltage: 100V
Drain current: 126A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
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Technische Details SIDR5102EP-T1-RE3 VISHAY
Description: N-CHANNEL 100 V (D-S) 175C MOSFE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V.
Weitere Produktangebote SIDR5102EP-T1-RE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIDR5102EP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V |
Produkt ist nicht verfügbar |
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SIDR5102EP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V |
Produkt ist nicht verfügbar |
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SIDR5102EP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A Drain-source voltage: 100V Drain current: 126A On-state resistance: 5.6mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD |
Produkt ist nicht verfügbar |