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SIDR510EP-T1-RE3

SIDR510EP-T1-RE3 Vishay Siliconix

sidr510ep.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.18 EUR
Mindestbestellmenge: 3000
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Technische Details SIDR510EP-T1-RE3 Vishay Siliconix

Description: N-CHANNEL 100 V (D-S) 175C MOSFE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 148A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V.

Weitere Produktangebote SIDR510EP-T1-RE3 nach Preis ab 3.35 EUR bis 7.1 EUR

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SIDR510EP-T1-RE3 SIDR510EP-T1-RE3 Hersteller : Vishay Siliconix sidr510ep.pdf Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V
auf Bestellung 5980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.05 EUR
10+ 5.86 EUR
100+ 4.66 EUR
500+ 3.94 EUR
1000+ 3.35 EUR
Mindestbestellmenge: 4
SIDR510EP-T1-RE3 SIDR510EP-T1-RE3 Hersteller : Vishay Semiconductors sidr510ep.pdf MOSFET N-CHANNEL 100 V MOSFET PWRPAK
auf Bestellung 4595 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.1 EUR
10+ 5.9 EUR
100+ 4.71 EUR
250+ 4.34 EUR
500+ 3.98 EUR
Mindestbestellmenge: 8
SIDR510EP-T1-RE3 Hersteller : VISHAY sidr510ep.pdf SIDR510EP-T1-RE3 SMD N channel transistors
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