SIDR570EP-T1-RE3 Vishay Semiconductors
auf Bestellung 617 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.05 EUR |
| 10+ | 5.93 EUR |
| 25+ | 5.59 EUR |
| 100+ | 4.78 EUR |
| 250+ | 4.52 EUR |
| 500+ | 4.26 EUR |
| 1000+ | 3.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIDR570EP-T1-RE3 Vishay Semiconductors
Description: N-CHANNEL 150 V (D-S) 175C MOSFE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), 90.9A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V.
Weitere Produktangebote SIDR570EP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SIDR570EP-T1-RE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 90.9A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 90.9A Pulsed drain current: 200A Power dissipation: 150W Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
 |
SIDR570EP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), 90.9A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V |
Produkt ist nicht verfügbar |
|
|
|
SIDR570EP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), 90.9A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V |
Produkt ist nicht verfügbar |
|
| SIDR570EP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 90.9A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 90.9A Pulsed drain current: 200A Power dissipation: 150W Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |