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SIDR626DP-T1-RE3

SIDR626DP-T1-RE3 Vishay Siliconix


sidr626dp.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.24 EUR
6000+ 3.11 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SIDR626DP-T1-RE3 Vishay Siliconix

Description: N-CHANNEL 60-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V.

Weitere Produktangebote SIDR626DP-T1-RE3 nach Preis ab 3.44 EUR bis 6.66 EUR

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SIDR626DP-T1-RE3 SIDR626DP-T1-RE3 Hersteller : Vishay Siliconix sidr626dp.pdf Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
auf Bestellung 8722 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.66 EUR
10+ 5.59 EUR
100+ 4.52 EUR
500+ 4.02 EUR
1000+ 3.44 EUR
Mindestbestellmenge: 4
SIDR626DP-T1-RE3 Hersteller : VISHAY sidr626dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIDR626DP-T1-RE3 Hersteller : VISHAY sidr626dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar