SIDR638DP-T1-GE3

verfügbar/auf Bestellung
auf Bestellung 2998 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 2998 Stücke

Lieferzeit 14-28 Tag (e)
Technische Details SIDR638DP-T1-GE3
Description: MOSFET N-CH 40V 100A PPAK SO-8DC, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Preis SIDR638DP-T1-GE3 ab 3.9 EUR bis 5.36 EUR
SIDR638DP-T1-GE3 Hersteller: Vishay N-Channel 40 V (D-S) MOSFET ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIDR638DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 100A PPAK SO-8DC Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIDR638DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 100A PPAK SO-8DC Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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