SIDR638DP-T1-GE3

SIDR638DP-T1-GE3

SIDR638DP-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
sidr638dp-1766175.pdf
verfügbar/auf Bestellung
auf Bestellung 2998 Stücke
Lieferzeit 14-28 Tag (e)

10+ 5.36 EUR
11+ 4.84 EUR
25+ 4.58 EUR
100+ 3.9 EUR

Technische Details SIDR638DP-T1-GE3

Description: MOSFET N-CH 40V 100A PPAK SO-8DC, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).

Preis SIDR638DP-T1-GE3 ab 3.9 EUR bis 5.36 EUR

SIDR638DP-T1-GE3
Hersteller: Vishay
N-Channel 40 V (D-S) MOSFET
sidr638dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR638DP-T1-GE3
SIDR638DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A PPAK SO-8DC
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
sidr638dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR638DP-T1-GE3
SIDR638DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A PPAK SO-8DC
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
sidr638dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen