SIDR680DP-T1-GE3

SIDR680DP-T1-GE3

SIDR680DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 32.8A/100A PPAK
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount

sidr680dp.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 4.02 EUR

Technische Details SIDR680DP-T1-GE3

Description: MOSFET N-CH 80V 32.8A/100A PPAK, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 3.4V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.

Preis SIDR680DP-T1-GE3 ab 4.02 EUR bis 7.9 EUR

SIDR680DP-T1-GE3
SIDR680DP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 80V Vds 20V Vgs PowerPAK SO-8DC
sidr680dp-1766715.pdf
auf Bestellung 537 Stücke
Lieferzeit 14-28 Tag (e)
7+ 7.83 EUR
10+ 7.07 EUR
25+ 6.68 EUR
100+ 5.69 EUR
SIDR680DP-T1-GE3
SIDR680DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 32.8A/100A PPAK
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
sidr680dp.pdf
auf Bestellung 4400 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.9 EUR
10+ 7.1 EUR
100+ 5.7 EUR
500+ 4.69 EUR
1000+ 4.02 EUR