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SIDR680DP-T1-RE3

SIDR680DP-T1-RE3 Vishay Siliconix


sidr680dp.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.29 EUR
Mindestbestellmenge: 3000
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Technische Details SIDR680DP-T1-RE3 Vishay Siliconix

Description: N-CHANNEL 80-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V.

Weitere Produktangebote SIDR680DP-T1-RE3 nach Preis ab 3.49 EUR bis 6.73 EUR

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SIDR680DP-T1-RE3 SIDR680DP-T1-RE3 Hersteller : Vishay Siliconix sidr680dp.pdf Description: N-CHANNEL 80-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
auf Bestellung 5949 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.73 EUR
10+ 5.67 EUR
100+ 4.59 EUR
500+ 4.08 EUR
1000+ 3.49 EUR
Mindestbestellmenge: 4
SIDR680DP-T1-RE3 Hersteller : Vishay sidr680dp.pdf N-Channel MOSFET
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SIDR680DP-T1-RE3 SIDR680DP-T1-RE3 Hersteller : Vishay / Siliconix sidr680dp.pdf MOSFET N-CHANNEL 80-V (D-S) MOSFET
Produkt ist nicht verfügbar