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SIDR870ADP-T1-RE3

SIDR870ADP-T1-RE3 Vishay Siliconix


sidr870adp.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.48 EUR
6000+ 2.39 EUR
9000+ 2.31 EUR
Mindestbestellmenge: 3000
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Technische Details SIDR870ADP-T1-RE3 Vishay Siliconix

Description: N-CHANNEL 100-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 95A (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V.

Weitere Produktangebote SIDR870ADP-T1-RE3 nach Preis ab 2.61 EUR bis 5.49 EUR

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SIDR870ADP-T1-RE3 SIDR870ADP-T1-RE3 Hersteller : Vishay Siliconix sidr870adp.pdf Description: N-CHANNEL 100-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
auf Bestellung 21399 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.49 EUR
10+ 4.57 EUR
100+ 3.63 EUR
500+ 3.07 EUR
1000+ 2.61 EUR
Mindestbestellmenge: 5
SIDR870ADP-T1-RE3 SIDR870ADP-T1-RE3 Hersteller : Vishay / Siliconix sidr870adp.pdf MOSFET N-CHANNEL 100-V (D-S) MOSFET
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