SIE878DF-T1-GE3

SIE878DF-T1-GE3

SIE878DF-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 25V Vds 20V Vgs PolarPAK
sie878df-65893.pdf
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Technische Details SIE878DF-T1-GE3

Description: MOSFET N-CH 25V 45A POLARPAK, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 10-PolarPAK® (L), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 5.2W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PolarPAK® (L), Packaging: Tape & Reel (TR).

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SIE878DF-T1-GE3
SIE878DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 45A POLARPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
sie878df.pdf
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SIE878DF-T1-GE3
SIE878DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 45A POLARPAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 10-PolarPAK® (L)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PolarPAK® (L)
Packaging: Tape & Reel (TR)
sie878df.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE878DF-T1-GE3
SIE878DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 45A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
sie878df.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen