SIF902EDZ-T1-E3
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Lieferzeit 21-28 Tag (e)
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Technische Details SIF902EDZ-T1-E3
Description: MOSFET 2N-CH 20V 7A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 2x5, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7A, Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® (2x5).
Weitere Produktangebote SIF902EDZ-T1-E3
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SIF902EDZ-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 7A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 2x5 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® (2x5) |
Produkt ist nicht verfügbar |
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SIF902EDZ-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 7A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 2x5 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® (2x5) |
Produkt ist nicht verfügbar |