SIHA100N60E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 30A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
auf Bestellung 912 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 11.62 EUR |
| 50+ | 9.21 EUR |
| 100+ | 7.9 EUR |
| 500+ | 7.02 EUR |
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Technische Details SIHA100N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 30A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V.
Weitere Produktangebote SIHA100N60E-GE3 nach Preis ab 6.34 EUR bis 11.7 EUR
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SIHA100N60E-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 600V Vds; +/-30V Vgs Thin-Lead TO-220 |
auf Bestellung 478 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHA100N60E-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHA100N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 30 A, 0.086 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 35W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.086ohm |
auf Bestellung 835 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHA100N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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| SIHA100N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 73A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 73A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHA100N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 73A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 73A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |